1N1184 specifications sheet american microsemiconductor inc. page 1 of 1 133 kings road, madison, nj 07940 as/en/jisq/ 9100:2009 rev c and iso 9001:2008 certificate no: 45325 . tel. 973- 377 -9566 fax. 973- 377 - 3078 http://www.americanmicrosemiconductor.com military/high - rel n i(o) max.(a) output current 35 @temp (c) (test condition) 140# v(rrm)(v) rep.pk.rev. voltage 100 i(fsm) max.(a) pk.fwd.sur.cur. 500 v(fm) max.(v) forward voltage 1.7 @i(fm) (a) (test condition) 35 @temp. (c) (test condition) 140# i(rm) max.(a) reverse current 1.0m @v(r) (v)(test condition) 100 i(rm) max.(a) pk. rev. current 10m @temp. (c) (test condition) 140# maximum operating temp (c) 190# package style do - 203ab mounting style t description: this diode is enclosed in a hermatically sealed inner metallic case surrounded by a molded external case. this provides a high degree of ruggedness and durability. n otes: 1. full threads within 2 - 1/2 threads 2. standard polarity: stud is cathod e reverse polarity: stud is anode cat.: diodes class: silicon rectifiers type: general - purpose dim. inches millimeters minimum maximum minimum maximum notes a --- --- --- --- 1/4 - 28 b 0.867 0.687 16.950 17.440 c --- 0.793 --- 20.140 d --- 1.000 --- 25.400 e 0.422 0.453 10.720 11.500 f 0.115 0.200 2.920 5.080 g --- 0.450 --- 11.430 h 0.220 0.249 5.590 6.320 j 0.250 0.375 6.350 9.520 k 0.156 --- 3.970 m --- 0.567 --- 16.940 dia. n --- 0.080 --- 2.030 p 0.140 0.175 3.580 4.440 dia.
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